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RU1H100 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU1H100
Manufacturer Ruichips
File Size 440.44 KB
Description N-Channel Advanced Power MOSFET
Download RU1H100 Download (PDF)

General Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±25 175 -55 to 175 ① 75 300 ① 75 59 200 100 0.75 62.5 400 Unit V °C °C A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com RU1H100 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H100 Unit Min.

Typ.

Max.

Overview

RU1H100 N-Channel Advanced Power MOSFET.

Key Features

  • 100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.