RU1H130Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU1H130Q n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H130Q
Manufacturer	Ruichips
File Size	277.55 KB
Description	N-Channel Advanced Power MOSFET
Download	RU1H130Q Download (PDF)

General Description

G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 130 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 520 A 130 A 92 312 W 156 0.48 °C/W 50 °C/W 552 mJ Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2013 1 www.ruichips.com RU1H130Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H130Q Min.

Typ.

Overview

RU1H130Q N-Channel Advanced Power MOSFET.

Key Features

100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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