RU1HL13L - P-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU1HL13L
Manufacturer	Ruichips
File Size	305.27 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HL13L Datasheet
Additional preview pages of the RU1HL13L datasheet.

Product details

Description

TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanc

Features

-100V/-13A, RDS (ON) =160mΩ(Typ. )@VGS=-10V RDS (ON) =180mΩ(Typ. )@VGS=-4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 10, 2017 |