RU1HL8L mosfet equivalent, p-channel advanced power mosfet.
* -100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100.
* Power Management
* DC/DC Converters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Rat.
TO252
Applications
* Power Management
* DC/DC Converters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junct.
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