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RU1HL8L Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HL8L
Manufacturer Ruichips
File Size 304.41 KB
Description P-Channel Advanced Power MOSFET
Download RU1HL8L Download (PDF)

General Description

TO252 Applications • Power Management • DC/DC Converters P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -100 ±16 175 -55 to 175 -8 ① -32 -8 -

Overview

RU1HL8L P-Channel Advanced Power MOSFET.

Key Features

  • -100V/-8A, RDS (ON) =350mΩ(Typ. )@VGS=-10V RDS (ON) =400mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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