RU20E60L Datasheet PDF (N-Channel Advanced Power MOSFET)

RU20E60L - N-Channel Advanced Power MOSFET

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

20V/60A, RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Datasheet Details

Part number	RU20E60L
Manufacturer	Ruichips
File Size	308.33 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU20E60L Datasheet
Additional preview pages of the RU20E60L datasheet.

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Full PDF Text Transcription

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RU20E60L N-Channel Advanced Power MOSFET Features • 20V/60A, RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC converter • Motor Drives Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=4.

Published: Apr 25, 2016 |