Datasheet4U Logo Datasheet4U.com

RU20E8H Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU20E8H N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU20E8H
Manufacturer Ruichips
File Size 259.85 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU20E8H-Ruichips.pdf

General Description

SOP-8 Applications • Power Management • Converters Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 3 ① 34 8.8 7 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– SEP., 2011 .ruichips.

RU20E8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20E8H Unit Min.

Key Features

  • 20V/8.8A, RDS (ON) =12mΩ (Typ. ) @ VGS=10V RDS (ON) =15mΩ (Typ. ) @ VGS=4.5V RDS (ON) =21mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

RU20E8H Distributor