Datasheet Details
| Part number | RU20E60L |
|---|---|
| Manufacturer | Ruichips |
| File Size | 308.33 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU20E60L-Ruichips.pdf |
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Overview: RU20E60L N-Channel Advanced Power MOSFET.
| Part number | RU20E60L |
|---|---|
| Manufacturer | Ruichips |
| File Size | 308.33 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU20E60L-Ruichips.pdf |
|
|
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D G S TO252 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.
B– MAR., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 20 ±16 175 -55 to 175 60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A 60 A 43 52 W 26 2.9 °C/W 100 °C/W 90 mJ .ruichips.
RU20E60L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20E60L Min.
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