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RU20E8H - N-Channel Advanced Power MOSFET

Description

SOP-8 Applications Power Management Converters Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range

Features

  • 20V/8.8A, RDS (ON) =12mΩ (Typ. ) @ VGS=10V RDS (ON) =15mΩ (Typ. ) @ VGS=4.5V RDS (ON) =21mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU20E8H
Manufacturer Ruichips
File Size 259.85 KB
Description N-Channel Advanced Power MOSFET
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Full PDF Text Transcription

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RU20E8H N-Channel Advanced Power MOSFET MOSFET Features • 20V/8.8A, RDS (ON) =12mΩ (Typ.) @ VGS=10V RDS (ON) =15mΩ (Typ.) @ VGS=4.5V RDS (ON) =21mΩ (Typ.) @ VGS=2.
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