RU20T7G Datasheet PDF (N-Channel Advanced Power MOSFET)

RU20T7G - N-Channel Advanced Power MOSFET

Description

TSSOP-8 Applications PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Con

Features

20V/7A, RDS (ON) =12mΩ (Typ. ) @ VGS=4.5V RDS (ON) =18mΩ (Typ. ) @ VGS=2.5V.
Super High Dense Cell Design.
Reliable and Rugged.
ESD Protected.
Lead Free and Green Available Pin.

Datasheet Details

Part number	RU20T7G
Manufacturer	Ruichips
File Size	249.12 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU20T7G Datasheet
Additional preview pages of the RU20T7G datasheet.

📁 Similar Datasheet

RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)

RU20A - Fast-Recovery Rectifier Diodes (Sanken electric)

RU20A - Diode (Galaxy)

RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)

RU2 - Silicon And Fast Recovery Rectifiers (WEJ)

RU2 - FAST RECOVERY RECTIFIER DIODES (EIC)

RU2441B04 - RF Module (Samsung)

RU2441B04GCA - RF Module (Samsung)

RU2441B04UAA - RF Module (Samsung)

RU2441H04 - RF Module (Samsung)

Full PDF Text Transcription

Click to expand full text

RU20T7G N-Channel Advanced Power MOSFET MOSFET Features • 20V/7A, RDS (ON) =12mΩ (Typ.) @ VGS=4.5V RDS (ON) =18mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description TSSOP-8 Applications • PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.

Published: Apr 25, 2016 |