Datasheet Details
| Part number | RU20T8M7 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 311.82 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU20T8M7-Ruichips.pdf |
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Overview: RU20T8M7 N-Channel Advanced Power MOSFET.
| Part number | RU20T8M7 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 311.82 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU20T8M7-Ruichips.pdf |
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G2S2S2 D1/D2 PIN1 G1S1S1 PIN1 SDFN2050 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=4.5V) ID② Continuous Drain Current@TA(VGS=4.5V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S1 S2 Dual N-Channel MOSFET Rating Unit TC=25°C 20 ±10 150 -55 to 150 28 V °C °C A TC=25°C 60 A TC=25°C 28 TC=100°C 18 A TA=25°C 8 TA=70°C 6.4 TC=25°C 25 TC=100°C 10 W TA=25°C 1.7 TA=70°C 1.1 Ruichips Semiconductor Co., Ltd Rev.
A– MAY., 2013 1 .ruichips.
RU20T8M7 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 5 75 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed TBD Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20T8M7 Min.
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