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RU20T7G Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU20T7G N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU20T7G
Manufacturer Ruichips
File Size 249.12 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU20T7G-Ruichips.pdf

General Description

TSSOP-8 Applications • PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±8 150 -55 to 150 2 ① 28 7 5.5 1.5 0.96 83.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– SEP., 2012 .ruichips.

RU20T7G Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20T7G Unit Min.

Key Features

  • 20V/7A, RDS (ON) =12mΩ (Typ. ) @ VGS=4.5V RDS (ON) =18mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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