RU20T8M7 - N-Channel Advanced Power MOSFET

Description

G2S2S2 D1/D2 PIN1 G1S1S1 PIN1 SDFN2050 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward

Features

20V/8A, RDS (ON) =13mΩ(Typ. )@VGS=4.5V RDS (ON) =14mΩ(Typ. )@VGS=4V RDS (ON) =16mΩ(Typ. )@VGS=3.1V RDS (ON) =18mΩ(Typ. )@VGS=2.5V.
Super High Dense Cell Design.
Fast Switching Speed.
ESD Protected.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU20T8M7
Manufacturer	Ruichips
File Size	311.82 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU20T8M7 Datasheet
Additional preview pages of the RU20T8M7 datasheet.

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Full PDF Text Transcription

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RU20T8M7 N-Channel Advanced Power MOSFET Features • 20V/8A, RDS (ON) =13mΩ(Typ.)@VGS=4.5V RDS (ON) =14mΩ(Typ.)@VGS=4V RDS (ON) =16mΩ(Typ.)@VGS=3.1V RDS (ON) =18mΩ(Typ.)@VGS=2.

Published: Apr 25, 2016 |