RU20T8M7 mosfet equivalent, n-channel advanced power mosfet.
* 20V/8A,
RDS (ON) =13mΩ(Typ.)@VGS=4.5V RDS (ON) =14mΩ(Typ.)@VGS=4V RDS (ON) =16mΩ(Typ.)@VGS=3.1V RDS (ON) =18mΩ(Typ.)@VGS=2.5V
* Super High Dense Cell Design
* DC-DC Converters
* Power Management
Pin Description
G2S2S2
D1/D2
PIN1
G1S1S1 PIN1
SDFN2050
D1
D2
G1 G2
.
G2S2S2
D1/D2
PIN1
G1S1S1 PIN1
SDFN2050
D1
D2
G1 G2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Stor.
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