RU3065L mosfet equivalent, n-channel advanced power mosfet.
* 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested
* Switching Application Systems
Pin Description
TO-252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Paramet.
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