RU3060L Key Features
- 30V/53A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =13mΩ(tpy.)@VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Fast Switching and Fully Avalanche Rated
- Lead Free and Green Devices Available (RoHS pliant)
RU3060L is N-Channel Advanced Power MOSFET manufactured by Ruichips.
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
RU3060L | N-Channel MOSFET |
TO252 Applications Power Management in Desktop puter, Portable Equipment and DC/DC Converters. N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain...