RU306C - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU306C
Manufacturer	Ruichips
File Size	291.55 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU306C Datasheet
Additional preview pages of the RU306C datasheet.

Product details

Description

SOT23-3 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction

Features

30V/5A, RDS (ON) =30m (Typ. ) @ VGS=10V RDS (ON) =38m (Typ. ) @ VGS=4.5V RDS (ON) =110m (Typ. ) @ VGS=2.5V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available.

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Published: Apr 4, 2016 |