RU306C - N-Channel Advanced Power MOSFET

Description

SOT23-3 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on L

Features

30V/5A, RDS (ON) =30m (Typ. ) @ VGS=10V RDS (ON) =38m (Typ. ) @ VGS=4.5V RDS (ON) =110m (Typ. ) @ VGS=2.5V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available.

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU306C
Manufacturer	Ruichips
File Size	291.55 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU306C Datasheet
Additional preview pages of the RU306C datasheet.

📁 Similar Datasheet

RU3060L - N-Channel MOSFET (VBsemi)
RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
RU30E4B - N-Channel MOSFET (VBsemi)
RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
RU3 - Silicon And Fast Recovery Rectifiers (WEJ)
RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)

Other Datasheets by Ruichips

RU3060L - N-Channel Advanced Power MOSFET
RU3065L - N-Channel Advanced Power MOSFET
RU30100L - N-Channel Advanced Power MOSFET
RU30100R - N-Channel Advanced Power MOSFET
RU30105L - N-Channel Advanced Power MOSFET
RU30105R - N-Channel Advanced Power MOSFET
RU30106L - N-Channel Advanced Power MOSFET
RU3010H - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU306C N-Channel Advanced Power MOSFET Features • 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.

Published: Apr 4, 2016 |