Datasheet Details
| Part number | RU306C |
|---|---|
| Manufacturer | Ruichips |
| File Size | 291.55 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU306C Datasheet
|
|
|
General Description
SOT23-3
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on L
Key Features
- 30V/5A, RDS (ON) =30m (Typ. ) @ VGS=10V RDS (ON) =38m (Typ. ) @ VGS=4.5V RDS (ON) =110m (Typ. ) @ VGS=2.5V.
- Low RDS (ON).
- Super High Dense Cell Design.
- Reliable and Rugged.
- Lead Free and Green Available.