RU3065L - N-Channel Advanced Power MOSFET

Description

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

30V/65A, RDS (ON) =4mΩ (Typ. )@VGS=10V RDS (ON) =6mΩ (Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU3065L
Manufacturer	Ruichips
File Size	289.21 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU3065L Datasheet
Additional preview pages of the RU3065L datasheet.

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Full PDF Text Transcription

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RU3065L N-Channel Advanced Power MOSFET MOSFET Features • 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.

Published: Apr 10, 2017 |