RU3065L Key Features
- 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU3065L
- Manufacturer: Ruichips
- Size: 289.21 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU3060L | N-Channel Advanced Power MOSFET |
| RU306C | N-Channel Advanced Power MOSFET |
| RU30100L | N-Channel Advanced Power MOSFET |
| RU30100R | N-Channel Advanced Power MOSFET |
| RU30105L | N-Channel Advanced Power MOSFET |
RU3065L Description
TO-252 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source...