RU30P3B - P-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

-30V/-3.5A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =80mΩ(Typ. )@VGS=-4.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30P3B
Manufacturer	Ruichips
File Size	323.84 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU30P3B Datasheet
Additional preview pages of the RU30P3B datasheet.

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Full PDF Text Transcription

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RU30P3B P-Channel Advanced Power MOSFET Features • -30V/-3.5A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-4.

Published: Apr 26, 2016 |