Datasheet Details
| Part number | RU30P4C6 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 324.95 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P4C6-Ruichips.pdf |
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Overview: RU30P4C6 P-Channel Advanced Power MOSFET.
| Part number | RU30P4C6 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 324.95 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P4C6-Ruichips.pdf |
|
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S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -30 ±20 150 -55 to 150 -1.2 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -16 A -4 A -3.2 1.3 W 0.8 - °C/W 100 °C/W TBD mJ Ruichips Semiconductor Co., Ltd Rev.
A– JUL., 2013 1 .ruichips.
RU30P4C6 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30P4C6 Min.
| Part Number | Description |
|---|---|
| RU30P4C | P-Channel Advanced Power MOSFET |
| RU30P4B | P-Channel Advanced Power MOSFET |
| RU30P4H | P-Channel Advanced Power MOSFET |
| RU30P3B | P-Channel Advanced Power MOSFET |
| RU30P5D | P-Channel Advanced Power MOSFET |
| RU30P5H | P-Channel Advanced Power MOSFET |
| RU30100L | N-Channel Advanced Power MOSFET |
| RU30100R | N-Channel Advanced Power MOSFET |
| RU30105L | N-Channel Advanced Power MOSFET |
| RU30105R | N-Channel Advanced Power MOSFET |