Datasheet Details
| Part number | RU30P3B |
|---|---|
| Manufacturer | Ruichips |
| File Size | 323.84 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P3B-Ruichips.pdf |
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Overview: RU30P3B P-Channel Advanced Power MOSFET.
| Part number | RU30P3B |
|---|---|
| Manufacturer | Ruichips |
| File Size | 323.84 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P3B-Ruichips.pdf |
|
|
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D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -30 ±20 150 -55 to 150 -1 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -14 A -3.5 A -2.8 1 W 0.64 - °C/W 125 °C/W TBD mJ Ruichips Semiconductor Co., Ltd Rev.
A– APR., 2013 1 .ruichips.
RU30P3B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30P3B Min.
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