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RU30P4B Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU30P4B P-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU30P4B
Manufacturer Ruichips
File Size 324.53 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU30P4B-Ruichips.pdf

General Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -25 ±16 150 -55 to 150 -1.25 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -16 A -4 A -3.2 1 W 0.64 - °C/W 125 °C/W - mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2013 1 .ruichips.

RU30P4B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30P4B Min.

Key Features

  • -25V/-4A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =60mΩ(Typ. )@VGS=-4.5V RDS (ON) =80mΩ(Typ. )@VGS=-2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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RU30P4B Distributor