Datasheet Details
| Part number | RU30P4H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 315.25 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P4H-Ruichips.pdf |
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Overview: RU30P4H P-Channel Advanced Power MOSFET.
| Part number | RU30P4H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 315.25 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU30P4H-Ruichips.pdf |
|
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D D D D G S S pin1 S SOP-8 DDDD (8)(7)(6)(5) G(4) Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed (1) (2)(3) SSS P-Channel MOSFET Rating Unit TA=25°C -30 ±20 150 -55 to 150 -2.7 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -20 A -5 A -3.2 2.5 W 1.6 25 °C/W 50 °C/W - mJ Ruichips Semiconductor Co., Ltd Rev.
B– MAR., 2013 1 .ruichips.
RU30P4H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30P4H Min.
| Part Number | Description |
|---|---|
| RU30P4B | P-Channel Advanced Power MOSFET |
| RU30P4C | P-Channel Advanced Power MOSFET |
| RU30P4C6 | P-Channel Advanced Power MOSFET |
| RU30P3B | P-Channel Advanced Power MOSFET |
| RU30P5D | P-Channel Advanced Power MOSFET |
| RU30P5H | P-Channel Advanced Power MOSFET |
| RU30100L | N-Channel Advanced Power MOSFET |
| RU30100R | N-Channel Advanced Power MOSFET |
| RU30105L | N-Channel Advanced Power MOSFET |
| RU30105R | N-Channel Advanced Power MOSFET |