RU30P4B - P-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

-25V/-4A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =60mΩ(Typ. )@VGS=-4.5V RDS (ON) =80mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30P4B
Manufacturer	Ruichips
File Size	324.53 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU30P4B Datasheet
Additional preview pages of the RU30P4B datasheet.

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Full PDF Text Transcription

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RU30P4B P-Channel Advanced Power MOSFET Features • -25V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =60mΩ(Typ.)@VGS=-4.5V RDS (ON) =80mΩ(Typ.)@VGS=-2.

Published: Apr 26, 2016 |