RU6080L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU6080L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU6080L
Manufacturer	Ruichips
File Size	284.99 KB
Description	N-Channel Advanced Power MOSFET
Download	RU6080L Download (PDF)

General Description

TO-252 Applications • SMPS • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– APR., 2011 Rating 60 ±25 175 -55 to 175 ② 80 ① 310 ② 80 65

Overview

RU6080L N-Channel Advanced Power MOSFET MOSFET.

Key Features

60V/80A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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