RU6085H
RU6085H is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 60V/80A,
RDS (ON) =6mΩ(Typ.)@VGS=10V
RDS (ON) =6.5mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- Fast Switching Speed
- Lead Free and Green Devices Available (Ro HS pliant)
Pin Description
SOP-8
Applications
- Power Management.
- Switch Applications.
- Load switch
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC RJA③
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd Rev. A- AUG., 2016
N-Channel...