RU6080L
RU6080L is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 60V/80A, RDS (ON) =7mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- 100% avalanche tested
- Lead Free and Green Devices Available (Ro HS pliant)
Pin Description
TO-252
Applications
- SMPS
- High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TC=25°C
Continuous Drain Current(VGS=10V)
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C TC=100°C
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
Copyright© Ruichips Semiconductor Co., Ltd Rev. B- APR., 2011
Rating
60 ±25 175 -55 to...
