RU6080L Description
TO-252 Applications SMPS High Speed Power Switching N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C...
RU6080L Key Features
- 60V/80A, RDS (ON) =7mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)