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RU6099 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU6099
Manufacturer Ruichips
File Size 438.37 KB
Description N-Channel Advanced Power MOSFET
Download RU6099 Download (PDF)

General Description

TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 120(Max) 380 120 90 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current 200 150 0.8 1000 W °C/W mJ Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– SEP., 2009 www.ruichips.com Free Datasheet http://www.Datasheet4U.com RU6099 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ② (TA=25°C Unless Otherwise Noted) RU6099 Min.

Typ.

Overview

RU6099 N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 60V/120A, RDS (ON) =6mΩ (Type) VGS=10V IDS=40A.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available Pin.