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RU6099R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU6099R
Manufacturer Ruichips
File Size 357.28 KB
Description N-Channel Advanced Power MOSFET
Download RU6099R Download (PDF)

General Description

TO-220 Applications • Switching Application Systems • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS Parameter Rating 60 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C PD RθJC ③ ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A 120 380 Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current ② ① 120 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 90 150 75 1 ① W °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 625 mJ Copyright Ruichips Semiconductor Co., Ltd Rev.

B– NOV., 2012 www.ruichips.com Free Datasheet http://www.Datasheet4U.com RU6099R Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU6099R Min.

Typ.

Overview

RU6099R N-Channel Advanced Power MOSFET.

Key Features

  • 60V/120A, RDS (ON) =6mΩ (Typ. ) @VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available Pin.

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