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RU6099S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU6099S
Manufacturer Ruichips
File Size 305.47 KB
Description N-Channel Advanced Power MOSFET
Download RU6099S Download (PDF)

General Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 60 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 380 A 120 A 90 150 W 75 1 °C/W 62.5 °C/W 625 mJ Ruichips Semiconductor Co., Ltd Rev.

A– OCT., 2013 1 www.ruichips.com RU6099S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6099S Min.

Typ.

Key Features

  • 60V/120A, RDS (ON) =6m(Typ. ) @VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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