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RU60E6D Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU60E6D
Manufacturer Ruichips
File Size 247.17 KB
Description N-Channel Advanced Power MOSFET
Download RU60E6D Download (PDF)

General Description

SOT-223 Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current(VGS=10V) TA=25°C TA=70°C PD ② RθJA Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 60 ±20 150 -55 to 150 3 24 ① 6 5 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A – MAY., 2011 www.rui

Overview

RU60E6D N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 60V/6A, RDS (ON) =32mΩ (Typ. ) @ VGS=10V RDS (ON) =40mΩ (Typ. ) @ VGS=4.5V.
  • ESD Protected.
  • Reliable and Rugged.
  • Ultra Low On-Resistance.
  • Lead Free and Green Available Pin.

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