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RU60E6H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU60E6H
Manufacturer Ruichips
File Size 284.44 KB
Description N-Channel Advanced Power MOSFET
Download RU60E6H Download (PDF)

General Description

SOP-8 Applications • Power Management.

• Switch Applications.

Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TC=25°C TC=70°C Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Rating 60 ±20 150 -55 to 150 6 ① 24 6 4.6 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

Overview

RU60E6H N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 60V/6A, RDS (ON) =31mΩ (Type) @ VGS=10V RDS (ON) =37mΩ (Type) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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