Datasheet4U Logo Datasheet4U.com

RU8099R - N-Channel Advanced Power MOSFET

Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Curren

Features

  • 90V/90A RDS (ON)=8mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.

📥 Download Datasheet

Datasheet preview – RU8099R

Datasheet Details

Part number RU8099R
Manufacturer Ruichips
File Size 437.30 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU8099R Datasheet
Additional preview pages of the RU8099R datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RU80100R - N-Channel Advanced Power MOSFET
  • RU80100S - N-Channel Advanced Power MOSFET
  • RU80190R - N-Channel Advanced Power MOSFET
  • RU8048R - N-Channel Advanced Power MOSFET
  • RU8048S - N-Channel Advanced Power MOSFET
  • RU8080R - N-Channel Advanced Power MOSFET
  • RU8080S - N-Channel Advanced Power MOSFET
  • RU80N15 - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU8099 N-Channel Advanced Power MOSFET Features • 90V/90A RDS (ON)=8mΩ(Typ.
Published: |