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RU80T4H - N-Channel Advanced Power MOSFET

Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

Features

  • 80V/4A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =80mΩ(Typ. )@VGS=4.5V RDS (ON) =90mΩ(Typ. )@VGS=2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RU80T4H

Datasheet Details

Part number RU80T4H
Manufacturer Ruichips
File Size 301.71 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU80T4H Datasheet
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Full PDF Text Transcription

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RU80T4H N-Channel Advanced Power MOSFET Features • 80V/4A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =80mΩ(Typ.)@VGS=4.5V RDS (ON) =90mΩ(Typ.)@VGS=2.
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