RU80T4H mosfet equivalent, n-channel advanced power mosfet.
* 80V/4A,
RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =80mΩ(Typ.)@VGS=4.5V RDS (ON) =90mΩ(Typ.)@VGS=2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Re.
* DC/DC Converters
Pin Description
D2 D2 D1 D1
G2 S2 G1 pin1 S1
SOP-8
D1 D2
G1 G2
Absolute Maximum Ratings
Symbol.
D2 D2 D1 D1
G2 S2 G1 pin1 S1
SOP-8
D1 D2
G1 G2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temper.
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