RU8205C6 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU8205C6 n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU8205C6
Manufacturer	Ruichips
File Size	369.98 KB
Description	N-Channel Advanced Power MOSFET
Download	RU8205C6 Download (PDF)

General Description

G2 D1/D2 G1 S2 D1/D2 S1 SOT23-6 D1 D2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

C– AUG., 2015 1 G1 G2 S1 S2 Dual N-Channel MOSFET

Overview

RU8205C6 N-Channel Advanced Power MOSFET.

Key Features

20V/6A, RDS (ON) =18mΩ(Typ. )@VGS=4.5V RDS (ON) =23mΩ(Typ. )@VGS=2.5V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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