RU8205C6 mosfet equivalent, n-channel advanced power mosfet.
* 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V
* Low RDS (ON)
* Super High Dense Cell Design
* Reliable and Rugged
* Lead Free .
* Power Management
Pin Description
G2 D1/D2
G1
S2 D1/D2 S1
SOT23-6
D1
D2
Absolute Maximum Ratings
Symbol
Par.
G2 D1/D2
G1
S2 D1/D2 S1
SOT23-6
D1
D2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature R.
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