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RU8590S - N-Channel Advanced Power MOSFET

Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Features

  • 85V/90A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU8590S
Manufacturer Ruichips
File Size 378.93 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU8590S Datasheet

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Full PDF Text Transcription

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RU8590S N-Channel Advanced Power MOSFET Features • 85V/90A, RDS (ON) =5.8mΩ(Typ.
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