RU8590S - N-Channel Advanced Power MOSFET

Ruichips

RU8590S Datasheet Preview — Preview of RU8590S PDF

Datasheet Details

Part number	RU8590S
Manufacturer	Ruichips
File Size	378.93 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU8590S-Ruichips.pdf

RU8590S Product details

Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source A

Features

85V/90A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

📁 RU8590S Similar Datasheet

Other Datasheets by Ruichips

RU8590R - N-Channel Advanced Power MOSFET
RU80100R - N-Channel Advanced Power MOSFET
RU80100S - N-Channel Advanced Power MOSFET
RU80190R - N-Channel Advanced Power MOSFET
RU8048R - N-Channel Advanced Power MOSFET
RU8048S - N-Channel Advanced Power MOSFET

Published: Apr 4, 2016 |