K6F4016R4G ram equivalent, 256k x16 bit super low power and low voltage full cmos static ram.
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CMOS SRAM
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256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
Process Technol.
Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMO.
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