Datasheet Summary
SAMWIN
N-channel MOSFET
BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm
2 1 2 1 3 2 3 1
Features
- High ruggedness
- RDS(ON) (Max 5.0 Ω)@VGS=10V
- Gate Charge (Max 8nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-220F
TO-220
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.
Order Codes
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