SW2N65B - N-channel MOSFET

SAMWIN

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

TO-220F.
High ruggedness.
RDS(ON) (Max 5.6 Ω)@VGS=10V.
Gate Charge (Typical 7.7nC).
Improved dv/dt Capability.
100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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SW2N65B n-channel mosfet by SAMWIN - Datasheet Preview

Datasheet Details

Part number	SW2N65B
Manufacturer	SAMWIN
File Size	677.84 KB
Description	N-channel MOSFET
Datasheet	SW2N65B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW2N65B N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. BVDSS : 650V ID : 2.0A RDS(ON) : 5.

Published: Jul 9, 2018 |