SAMWIN Datasheet | Specifications & PDF Download

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SW068R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263  High ruggedness  Low RDS(ON) (Typ 7.1mΩ)@VGS=10V  Low Gate Cha

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SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im

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www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.0

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www.DataSheet.co.kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

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SW2604 PWM SW2604、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/DC

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SW2604A PWM SW2604A、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/

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SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 107n

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SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil

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SAMWIN SW2N65B N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt C

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SW2601A ჰш॥ᇅۚࣚ؇‫ޚ‬࿢Ĕ‫ޚ‬ੀ PWM ॥ᇅఖ ‫ۀ‬ඍ
൞၂ᇕۚྟି৖ཌൔ 18. ॥ᇅఖđᇶေႨႿᇏཬ‫ ੱۿ‬$ %$ ԉ‫׈‬ఖ ‫ބ‬ൡ஥ఖᇏb෱‫۽‬ቔႿჰшҐဢ‫ࢫטބ‬đॖസԢࠞࡗܻᯒ‫ ބ‬5- đః‫ޚ‬࿢‫ޚބ‬ ੀ॥ᇅหྟඪૼೂ༯๭bቋնൻԛ‫

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SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V 

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SAMWIN General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A :

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www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4

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www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.8

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www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.5

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www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A :

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