SAMWIN Datasheet | Specifications & PDF Download

SW2604A PWM SW2604A、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/

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SW2604 PWM SW2604、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/DC

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SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

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SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc

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SW2603 PWM SW2603PWM 。AC/DC 。85V-256V 5W 。， AC/DC。IC ， ，；IC ， 。 ， ， CB ，700V ，。IC ，、、，。IC 2.5V ，， 。            700V, , ,0.15W ,、 ,

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SW2658A PWM SW2658APWMMOSFET,24W、、 。 。, ,VDD(UVLO)、 (OVP)、 (OCP)、 (OLP) 。EMI.           :4ms H iccup Mode, :50KHz 0.15W ,(OLP)、

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg

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SAMWIN General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A :

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SW068R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263  High ruggedness  Low RDS(ON) (Typ 7.1mΩ)@VGS=10V  Low Gate Cha

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www.DataSheet.co.kr SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.

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SAMWIN SW100N03 N-channel MOSFET Features TO-220 TO-251 TO-252 TO-263 ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69n

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 0.85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 S

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SW10N65 N-channel Enhanced mode TO-220F/TO-220 MOSFET Features TO- 220F TO-220  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge

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SW055R68E7T Features N-channel Enhanced mode TO-220/TO-263 MOSFET  High ruggedness  Low RDS(ON) (Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ 94nC)

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SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220  High

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www.DataSheet.co.kr SAMWIN TO-220F TO-220 SW4N65 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC)

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SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100%

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SAMWIN TO-220F TO-220 SW7N65 N-channel MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 1

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