SW4N60 Datasheet | Samwin

Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and high efficiency switch mode power supplies. D Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃ ) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 4 3.0 16 ±30 260 7.3 4.5 73 0.85 -55~+150 300 Units V A A A V m J m J V/ns W W/℃ ℃ ℃ Thermal Characteristics Value Symbol JC CS JA Units Max 1.72 62.5 ℃/ W ℃/ W ℃/ W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ - 1/6 REV0.1 D a t a .Data Sheet.co.kr SAMWIN Electrical Characteristics Symbol Off Characteristics BVDSS △ BVDSS/△ Tj IDSS Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VGS=0V,ID=250u A ID=250u A,referenced to 25℃ VDS=600V, VGS=0V VDS=480V, Tc=125℃ VGS=30V,VDS=0V VGS=-30V, VDS=0V 600 (Tc=25℃ unless otherwise noted) Value Test Conditions Min Typ Max Units Parameter - V V/℃ - - 1 100 -100 u A n A n A On Characteristics...