SW4N60B Datasheet | SEMIPOWER

Features - High ruggedness - RDS(ON) (Max 2.5 Ω)@VGS=10V - Gate Charge (Typ 11n C) - Improved dv/dt Capability - 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 2 3 Sales Type SW I 4N60 SW D 4N60 SW F 4N60 Marking SW4N60B SW4N60B SW4N60B Package TO-251 TO-252 TO-220F Packaging TUBE REEL TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25o C) Derating Factor above 25o C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) 140 1.1 (@TC=25o C) (@TC=100o C) (note 1) Parameter Value TO-251 TO-252 600 4- 2.5- 16 ± 30 271 50 5 144.5 1.2 -55 ~ + 150 300 19.1 0.152 TO-220F Unit V A A A V m J m J V/ns W W/o C o C o C - . Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient 76.1 78.9 48.32 Value TO-251 0.91 TO-252 0.87 TO-220F 6.56 Unit o C/W o C/W o C/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Feb. 2014. Rev. 3.0 1/7 http://.. SAMWIN Electrical characteristic ( TC = 25o C unless otherwise specified ) Symbol Off characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to source breakdown voltage...