SW4N60B - N-channel I-PAK/D-PAK/TO-220F MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

High ruggedness.
RDS(ON) (Max 2.5 Ω)@VGS=10V.
Gate Charge (Typ 11nC).
Improved dv/dt Capability.
100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General.

SEMIPOWER

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Datasheet Details

Part number	SW4N60B
Manufacturer	SEMIPOWER
File Size	932.96 KB
Description	N-channel I-PAK/D-PAK/TO-220F MOSFET
Datasheet	SW4N60B Datasheet
Additional preview pages of the SW4N60B datasheet.

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Full PDF Text Transcription

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.

Published: Apr 22, 2014 |