SW4N60A Datasheet | Samwin

Features - High ruggedness - RDS(ON) (Max 2.2 Ω)@VGS=10V - Gate Charge (Typ 25n C) - Improved dv/dt Capability - 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 2 Sales Type SW P 4N60A SW F 4N60A Marking SW4N60A SW4N60A Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25o C) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25o C =25o C) (note 2) (note 1) (note 3) 100 0.8 -55 ~ + 150 300 (@TC=100o C) (note 1) 4.0 2.6 16 ± 30 220 10 4.5 33- 0.26 Parameter Value TO-220 600 4.0- 2.5- TO-220F Unit V A A A V m J m J V/ns W W/o C o C o C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. - . Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Mar. 2011. Rev. 2.0 Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient Value TO-220 1.25 0.5 62.5 TO-220F 3.8 Unit o C/W o C/W o C/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 Datasheet pdf - http://..net/ .Data Sheet.co.kr SAMWIN Electrical characteristic ( TC = 25o C unless otherwise specified ) Symbol Off characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to source breakdown voltage Breakdown voltage temperature...