SW4N60K Datasheet | SEMIPOWER

Features - High ruggedness - Low RDS(ON) (Typ 1Ω)@VGS=10V - Low Gate Charge (Typ 13n C) - Improved dv/dt Capability - 100% Avalanche Tested - Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V : 4A RDS(ON) : 1Ω General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type SW F 4N60K SW I 4N60K SW D 4N60K Absolute maximum ratings Marking SW4N60K SW4N60K SW4N60K Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Symbol Parameter VDSS...