Datasheet4U Logo Datasheet4U.com

SW4N60K - N-Channel MOSFET

Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 1Ω)@VGS=10V.
  • Low Gate Charge (Typ 13nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

📥 Download Datasheet

Datasheet preview – SW4N60K

Datasheet Details

Part number SW4N60K
Manufacturer SEMIPOWER
File Size 958.39 KB
Description N-Channel MOSFET
Datasheet download datasheet SW4N60K Datasheet
Additional preview pages of the SW4N60K datasheet.

📁 Similar Datasheet

  • SW4N60 - N-Channel MOSFET (Samwin)
  • SW4N60A - N-Channel MOSFET (Samwin)
  • SW4N60V - N-Channel MOSFET (Samwin)
  • SW4N65 - N-Channel MOSFET (Samwin)
  • SW4N70L - N-channel MOSFET (Samwin)
  • SW4N80B - N-channel TO-220F MOSFET (Samwin)
  • SW401 - 4-SPST Switches (BOWEI)
  • SW401B - 4-SPST Switches (BOWEI)
  • SW402 - 4-SPST Switches (BOWEI)
  • SW402B - 4-SPST Switches (BOWEI)
Other Datasheets by SEMIPOWER

Full PDF Text Transcription

Click to expand full text
SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω 2 1 General Description 3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Published: |