SW4N60K Overview
3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 20 23.5 106.4 101.4 0.19 0.85 0.81 -55 ~ + 150 300 V/ns W W/oC oC oC.
SW4N60K Key Features
- High ruggedness
- Low RDS(ON) (Typ 1Ω)@VGS=10V
- Low Gate Charge (Typ 13nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Adapter,LED, Charger
