SW4N60V Datasheet | Samwin

Features - High ruggedness - RDS(ON) (Max 2.5 Ω)@VGS=10V - Gate Charge (Typ 25n C) - Improved dv/dt Capability - 100% Avalanche Tested TO-251 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 Sales Type SW I 4N60V Marking SW4N60V Package TO-251 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25o C) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25o C =25o C) (note 2) (note 1) (note 3) (@TC=100o C) (note 1) Parameter Value 600 4.0 2.2 16 ± 30 210 10.6 4.5 48 0.38 -55 ~ + 150 300 Unit V A A A V m J m J V/ns W W/o C o C o C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. - . Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Dec. 2011. Rev. 1.0 Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient Value 2.6 0.5 100 Unit o C/W o C/W o C/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 Datasheet pdf - http://..net/ .Data Sheet.co.kr SAMWIN Electrical characteristic ( TC = 25o C unless otherwise specified ) Symbol Off characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward IGSS Gate to...