SW4N60D Datasheet | SEMIPOWER

Features TO-220F TO-251N TO-252 - High ruggedness - RDS(ON) (Max 2.2Ω)@VGS=10V - Gate Charge (Typ 18n C) - Improved dv/dt Capability - 100% Avalanche Tested 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 4A RDS(ON) : 2.2Ω Order Codes Item 1 2 3 Sales Type SW F 4N60 SW I 4N60 SW D 4N60 Marking SW4N60D SW4N60D SW4N60D Package TO-220F TO-251N TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol Parameter VDSS IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current (@TC=25o C)...