SW4N60D - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

TO-220F TO-251N TO-252.
High ruggedness.
RDS(ON) (Max 2.2Ω)@VGS=10V.
Gate Charge (Typ 18nC).
Improved dv/dt Capability.
100% Avalanche Tested 123 12 3 12 3 1. Gate 2. Drain 3. Source General.

SEMIPOWER

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Datasheet Details

Part number	SW4N60D
Manufacturer	SEMIPOWER
File Size	642.11 KB
Description	MOSFET
Datasheet	SW4N60D Datasheet
Additional preview pages of the SW4N60D datasheet.

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Full PDF Text Transcription

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SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET Features TO-220F TO-251N TO-252 ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 123 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 4A RDS(ON) : 2.

Published: Apr 20, 2017 |