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SW3205 - N-channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.008 Ω)@VGS=10V.
  • Gate Charge (Typ 146nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220 BVDSS : 55V ID : 110A RDS(ON) : 0.008 ohm 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW3205
Manufacturer Samwin
File Size 809.56 KB
Description N-channel MOSFET
Datasheet download datasheet SW3205 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 BVDSS : 55V ID : 110A RDS(ON) : 0.008 ohm 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.