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SW30N06 - N-channel MOSFET

General Description

These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.036 Ω)@VGS=10V.
  • Gate Charge (Typ 20nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 2 1 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source 1 General.

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Datasheet Details

Part number SW30N06
Manufacturer Samwin
File Size 551.06 KB
Description N-channel MOSFET
Datasheet download datasheet SW30N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 2 1 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.