SW30N06 Datasheet | Samwin

.DataSheet.co.kr SAMWIN N-channel MOSFET Features - High ruggedness - RDS(ON) (Max 0.036 Ω)@VGS=10V - Gate Charge (Typ 20nC) - Improved dv/dt Capability - 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in...