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SW3N80A - N-channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 4.5 Ω)@VGS=10V.
  • Gate Charge (Typ 26nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 TO-252 3 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SW3N80A
Manufacturer Samwin
File Size 1.05 MB
Description N-channel MOSFET
Datasheet download datasheet SW3N80A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW3N80A N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 1 2 3 2 3 1 3 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 TO-252 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.