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SW3N80 - N-channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 4.5 Ω)@VGS=10V.
  • Gate Charge (Typ 26nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW3N80
Manufacturer Samwin
File Size 904.01 KB
Description N-channel MOSFET
Datasheet download datasheet SW3N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.