SW3N80C - N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-220F TO-251 TO-252.
High ruggedness.
Low RDS(ON) (Typ 3.9Ω)@VGS=10V.
Low Gate Charge (Typ 12.5nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW3N80C n-channel enhanced mode to-220f/to-251/to-252 mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW3N80C
Manufacturer	Samwin
File Size	736.68 KB
Description	N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Datasheet	SW3N80C Datasheet

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Full PDF Text Transcription (Reference)

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SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V  Low Gate Charge (Typ 12.5nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Industrial power，LED,Adapter 1 23 1 23 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 800V ID : 3.0A RDS(ON) : 3.