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SW3205B - N-channel Enhanced mode TO-220 MOSFET

General Description

1.

Gate 2.

Drain 3.

Key Features

  • TO-220.
  • High ruggedness.
  • Low RDS(ON) (Typ 4.8mΩ)@VGS=10V.
  • Low Gate Charge (Typ 80nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW3205B
Manufacturer Samwin
File Size 583.24 KB
Description N-channel Enhanced mode TO-220 MOSFET
Datasheet download datasheet SW3205B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: DC-DC Converter, Inverter, 12 3 Synchronous Rectification General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 60V ID : 110A RDS(ON) : 4.